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ChinaIRFD220
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD220
BESCHREIBUNG
0.8A 200V 0.800 OHM N-CHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
579
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 480mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD220
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRFD220
HARHARIRFD220
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD220
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 579
Einzelpreis: $0.52
Verpackung: Bulk
MinMultiplikator: 579
Verpackung: Bulk
MinMultiplikator: 579
Stellvertreter
-