Mfr
Infineon Technologies
Product Status
Not For New Designs
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 800 V
FET Feature
Current Sensing
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Base Product Number
IMZ120