Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IMZ120R045M1XKSA1
BESCHREIBUNG
SICFET N-CH 1200V 52A TO247-4
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-4-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IMZ120R045M1XKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 800 V
FET Feature
Current Sensing
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Package / Case
TO-247-4
Base Product Number
IMZ120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001346258
448-IMZ120R045M1XKSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IMZ120R045M1XKSA1

Dokumente und Medien

Datasheets
1(IMZ120R045M1)
Featured Product
1(Silicon Carbide CoolSiC™ MOSFET)
EDA Models
1(IMZ120R045M1XKSA1 Models)

Menge Preis

QUANTITÄT: 510
Einzelpreis: $12.96653
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $15.19517
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $16.208
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $19.55
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

Teil Nr. : MSC025SMA120B4
Hersteller. : Microchip Technology
Verfügbare Menge. : 0
Einzelpreis. : $41.33000
Ersatztyp. : Similar