English
Spain
Rusia
Italy
China2SB1151-AZ
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB1151-AZ
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
332
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 200mA, 2A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A, 1V
Power - Max
1.3 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNS2SB1151-AZ
2156-2SB1151-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB1151-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 332
Einzelpreis: $0.91
Verpackung: Bulk
MinMultiplikator: 332
Verpackung: Bulk
MinMultiplikator: 332
Stellvertreter
-