Series
HiPerFET™, TrenchT2™
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)
75V
Current - Continuous Drain (Id) @ 25°C
120A
Rds On (Max) @ Id, Vgs
5.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
178nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
10500pF @ 25V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
ISOPLUSi5-PAK™
Supplier Device Package
ISOPLUS i4-PAC™
Base Product Number
FMM150