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ChinaFF2MR12KM1HOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FF2MR12KM1HOSA1
BESCHREIBUNG
SIC 2N-CH 1200V 500A AG-62MM
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 500A (Tc) Chassis Mount AG-62MM
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
FF2MR12KM1HOSA1 Models
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
500A (Tc)
Rds On (Max) @ Id, Vgs
2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id
5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs
1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
39700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-62MM
Base Product Number
FF2MR12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-FF2MR12KM1HOSA1
2156-FF2MR12KM1HOSA1
SP002851510
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF2MR12KM1HOSA1
Dokumente und Medien
Datasheets
1(FF2MR12KM1)
Featured Product
1(Silicon Carbide CoolSiC™ MOSFETs and Diodes)
EDA Models
1(FF2MR12KM1HOSA1 Models)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $877.298
Verpackung: Tray
MinMultiplikator: 1
Verpackung: Tray
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $909.01
Verpackung: Tray
MinMultiplikator: 1
Verpackung: Tray
MinMultiplikator: 1
Stellvertreter
Teil Nr. : FF1MR12KM1H
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : MFR Recommended