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ChinaTSM680P06CZ C0G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM680P06CZ C0G
BESCHREIBUNG
MOSFET P-CH 60V 18A TO220
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 18A (Tc) 42W (Tc) Through Hole TO-220
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM680P06CZ C0G
Dokumente und Medien
Datasheets
1(TSM680P06Cx (C0G, C5G, R0G))
Environmental Information
()
Menge Preis
-
Stellvertreter
Teil Nr. : IRF9Z34PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,077
Einzelpreis. : $1.76000
Ersatztyp. : Similar
Verfügbare Menge. : 1,077
Einzelpreis. : $1.76000
Ersatztyp. : Similar