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ChinaAUIRF1018E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRF1018E
BESCHREIBUNG
MOSFET N-CH 60V 79A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 79A (Tc) 110W (Tc) Through Hole TO-220AB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
AUIRF1018E Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
79A (Tc)
Rds On (Max) @ Id, Vgs
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
AUIRF1018
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF1018E
Dokumente und Medien
Datasheets
1(AUIRF1018E Overview)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF1018E Overview)
EDA Models
1(AUIRF1018E Models)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $1.12512
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
-