Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFT58N20Q TRL
BESCHREIBUNG
MOSFET N-CH 200V 58A TO268
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 58A (Tc) 300W (Tc) Surface Mount TO-268 (IXFT)
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
IXYS
Series
HiPerFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268 (IXFT)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
IXFT58

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IXFT58N20Q TRL-ND
IXFT58N20QTRL

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT58N20Q TRL

Dokumente und Medien

Datasheets
1(IXF(H,T)58M20Q)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 22/Mar/2017)
HTML Datasheet
1(IXF(H,T)58M20Q)

Menge Preis

-

Stellvertreter

Teil Nr. : IXTT82N25P
Hersteller. : IXYS
Verfügbare Menge. : 0
Einzelpreis. : $16.74000
Ersatztyp. : Direct