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China2N6760TXV
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N6760TXV
BESCHREIBUNG
5.5A, 400V, 1OHM, N-CHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 400 V 5.5A (Tc) 75W (Tc) Through Hole TO-3
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
36
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3
Package / Case
TO-204AA
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-2N6760TXV
HARHAR2N6760TXV
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation 2N6760TXV
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 36
Einzelpreis: $8.4
Verpackung: Bulk
MinMultiplikator: 36
Verpackung: Bulk
MinMultiplikator: 36
Stellvertreter
-