Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
120mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
Logic Level Gate, 4V Drive
Power Dissipation (Max)
105W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220