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ChinaTPCF8A01(TE85L)
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TEILNUMMER DES HERSTELLERS
TPCF8A01(TE85L)
BESCHREIBUNG
MOSFET N-CH 20V 3A VS-8
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 3A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIII
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 4.5V
Rds On (Max) @ Id, Vgs
49mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
330mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
VS-8 (2.9x1.5)
Package / Case
8-SMD, Flat Lead
Base Product Number
TPCF8A01
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
TPCF8A01CT
TPCF8A01(TE85L)CT
TPCF8A01FTR
TPCF8A01TE85LF
TPCF8A01(TE85L,F)
TPCF8A01TE85L
TPCF8A01(TE85L)DKR
TPCF8A01CTINACTIVE
TPCF8A01FDKR
TPCF8A01(TE85L)TR
TPCF8A01FCT-ND
TPCF8A01TRINACTIVE
TPCF8A01FCT
TPCF8A01TR-ND
TPCF8A01FTR-ND
TPCF8A01CT-ND
TPCF8A01(TE85L,F)-ND
TPCF8A01FDKR-ND
TPCF8A01TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TPCF8A01(TE85L)
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