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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC2612
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 400 V 3 A 30 W Through Hole TO-220AB
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
144
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 1.5A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
7 @ 3A, 5V
Power - Max
30 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNS2SC2612
2156-2SC2612
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC2612
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 144
Einzelpreis: $2.09
Verpackung: Bulk
MinMultiplikator: 144
Verpackung: Bulk
MinMultiplikator: 144
Stellvertreter
-