English
Spain
Rusia
Italy
China2SC3752M-CB11
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC3752M-CB11
BESCHREIBUNG
BIP NPN 3A 800V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 800 V 3 A 15MHz 30 W Through Hole TO-220ML
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
430
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
800 V
Vce Saturation (Max) @ Ib, Ic
2V @ 300mA, 1.5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 200mA, 5V
Power - Max
30 W
Frequency - Transition
15MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONS2SC3752M-CB11
2156-2SC3752M-CB11
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3752M-CB11
Dokumente und Medien
Datasheets
1(2SC3752M Datasheet)
Menge Preis
QUANTITÄT: 430
Einzelpreis: $0.7
Verpackung: Bulk
MinMultiplikator: 430
Verpackung: Bulk
MinMultiplikator: 430
Stellvertreter
-