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ChinaDF75R12W1H4FB11BOMA2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DF75R12W1H4FB11BOMA2
BESCHREIBUNG
IGBT MOD 1200V 25A 20MW
DETAILIERTE BESCHREIBUNG
IGBT Module Three Phase Inverter 1200 V 25 A 20 mW Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
24
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
EasyPACK™
Package
Tray
Product Status
Obsolete
IGBT Type
-
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
25 A
Power - Max
20 mW
Vce(on) (Max) @ Vge, Ic
2.65V @ 15V, 25A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
2 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
DF75R12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
DF75R12W1H4FB11BOMA2-ND
448-DF75R12W1H4FB11BOMA2
SP001604704
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies DF75R12W1H4FB11BOMA2
Dokumente und Medien
Datasheets
1(DF75R12W1H4F_B11)
Other Related Documents
1(Part Number Guide)
Menge Preis
-
Stellvertreter
-