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ChinaSPI10N10
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TEILNUMMER DES HERSTELLERS
SPI10N10
BESCHREIBUNG
MOSFET N-CH 100V 10.3A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 10.3A (Tc) 50W (Tc) Through Hole PG-TO262-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
426 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
SPI10N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SPI10N10X
SP000013846
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPI10N10
Dokumente und Medien
Datasheets
1(SP(I,P,B)10N10)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SP(I,P,B)10N10)
Menge Preis
-
Stellvertreter
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