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ChinaFDD8882
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDD8882
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
588
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12.6A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1260 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FDD8882
FAIFSCFDD8882
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD8882
Dokumente und Medien
Datasheets
1(FDU8882)
Menge Preis
QUANTITÄT: 588
Einzelpreis: $0.51
Verpackung: Bulk
MinMultiplikator: 588
Verpackung: Bulk
MinMultiplikator: 588
Stellvertreter
-