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ChinaNDT01N60T1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NDT01N60T1G
BESCHREIBUNG
MOSFET N-CH 600V 400MA SOT223
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 400mA (Tc) 2.5W (Tc) Surface Mount SOT-223 (TO-261)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NDT01N60T1G Models
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223 (TO-261)
Package / Case
TO-261-4, TO-261AA
Base Product Number
NDT01
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NDT01N60T1GOSCT
2156-NDT01N60T1G-ONTR-ND
NDT01N60T1GOSTR
NDT01N60T1G-ND
2156-NDT01N60T1G
NDT01N60T1GOSDKR
ONSONSNDT01N60T1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDT01N60T1G
Dokumente und Medien
Datasheets
1(NDD01N60, NDT01N60)
Environmental Information
()
PCN Obsolescence/ EOL
1(EOL 05/Feb/2016)
HTML Datasheet
1(NDD01N60, NDT01N60)
EDA Models
1(NDT01N60T1G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : STN1HNK60
Hersteller. : STMicroelectronics
Verfügbare Menge. : 45,081
Einzelpreis. : $1.07000
Ersatztyp. : Direct
Verfügbare Menge. : 45,081
Einzelpreis. : $1.07000
Ersatztyp. : Direct