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ChinaBUK9E04-30B,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK9E04-30B,127
BESCHREIBUNG
MOSFET N-CH 30V 75A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 75A (Tc) 254W (Tc) Through Hole I2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
6526 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
254W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
BUK9
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BUK9E04-30B
BUK9E04-30B,127-ND
954-BUK9E04-30B127
BUK9E04-30B-ND
568-6637-5
2156-BUK9E04-30B127
934058069127
NEXNXPBUK9E04-30B,127
568-6637
568-6637-ND
BUK9E0430B127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK9E04-30B,127
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 29/Dec/2014)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Menge Preis
-
Stellvertreter
-