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ChinaMJE271G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MJE271G
BESCHREIBUNG
TRANS PNP DARL 100V 2A TO126
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP - Darlington 100 V 2 A 6MHz 1.5 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1500 @ 120mA, 10V
Power - Max
1.5 W
Frequency - Transition
6MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
MJE27
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
MJE271G-ND
2156-MJE271G-ON
ONSONSMJE271G
MJE271GOS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJE271G
Dokumente und Medien
Datasheets
1(MJE270G, MJE271G)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 03/Oct/2014)
HTML Datasheet
1(MJE270G, MJE271G)
Menge Preis
-
Stellvertreter
Teil Nr. : BD682G
Hersteller. : onsemi
Verfügbare Menge. : 876
Einzelpreis. : $0.98000
Ersatztyp. : Similar
Verfügbare Menge. : 876
Einzelpreis. : $0.98000
Ersatztyp. : Similar