English
Spain
Rusia
Italy
China30C02S-TL-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
30C02S-TL-E
BESCHREIBUNG
BIP NPN 0.6A 30V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 30 V 600 mA 540MHz 200 mW Surface Mount 3-SMCP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6,662
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
190mV @ 10mA, 200mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 50mA, 2V
Power - Max
200 mW
Frequency - Transition
540MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
3-SMCP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-30C02S-TL-E
ONSONS30C02S-TL-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 30C02S-TL-E
Dokumente und Medien
Datasheets
1(30C02MH)
Menge Preis
QUANTITÄT: 6662
Einzelpreis: $0.05
Verpackung: Bulk
MinMultiplikator: 6662
Verpackung: Bulk
MinMultiplikator: 6662
Stellvertreter
-