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ChinaFQP17N08
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP17N08
BESCHREIBUNG
MOSFET N-CH 80V 16.5A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 16.5A (Tc) 65W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
888
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
115mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQP17N08-FS
FAIFSCFQP17N08
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP17N08
Dokumente und Medien
Datasheets
1(FQP17N08)
Menge Preis
QUANTITÄT: 888
Einzelpreis: $0.34
Verpackung: Tube
MinMultiplikator: 888
Verpackung: Tube
MinMultiplikator: 888
Stellvertreter
-