Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IMZA65R072M1HXKSA1
BESCHREIBUNG
MOSFET 650V NCH SIC TRENCH
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 28A (Tc) 96W (Tc) Through Hole PG-TO247-4-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
IMZA65R072M1HXKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
94mOhm @ 13.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
744 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
TO-247-4
Base Product Number
IMZA65

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

448-IMZA65R072M1HXKSA1
SP005398434

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IMZA65R072M1HXKSA1

Dokumente und Medien

Datasheets
1(Datasheet)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Silicon Carbide CoolSiC™ MOSFETs and Diodes)
EDA Models
1(IMZA65R072M1HXKSA1 Models)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $6.48413
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $7.20459
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $8.16517
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $9.12567
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $11.43
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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