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TEILNUMMER DES HERSTELLERS
2SB857C-E
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR, PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 4 A 15MHz 40 W Through Hole TO-220AB
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
163
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 1A, 4V
Power - Max
40 W
Frequency - Transition
15MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-2SB857C-E
RENRNS2SB857C-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB857C-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 163
Einzelpreis: $1.85
Verpackung: Bulk
MinMultiplikator: 163
Verpackung: Bulk
MinMultiplikator: 163
Stellvertreter
-