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ChinaNTMS4917NR2G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMS4917NR2G
BESCHREIBUNG
MOSFET N-CH 30V 7.1A 8SOIC
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 7.1A (Ta) 880mW (Ta) Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTMS4917NR2G Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.6 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1054 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
880mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS49
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
ONSONSNTMS4917NR2G
2156-NTMS4917NR2G-ONTR-ND
2156-NTMS4917NR2G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS4917NR2G
Dokumente und Medien
Datasheets
1(NTMS4917N)
Environmental Information
()
HTML Datasheet
1(NTMS4917N)
EDA Models
1(NTMS4917NR2G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : SI4686DY-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 3,799
Einzelpreis. : $1.50000
Ersatztyp. : Similar
Verfügbare Menge. : 3,799
Einzelpreis. : $1.50000
Ersatztyp. : Similar