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ChinaRF1S23N06LE
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S23N06LE
BESCHREIBUNG
23A, 60V, 0.065OHM, N-CHANNEL,
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 23A (Tc) 75W (Tc) Through Hole I2PAK (TO-262)
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
423
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
65mOhm @ 23A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
HARHARRF1S23N06LE
2156-RF1S23N06LE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S23N06LE
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 423
Einzelpreis: $0.71
Verpackung: Bulk
MinMultiplikator: 423
Verpackung: Bulk
MinMultiplikator: 423
Stellvertreter
-