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ChinaIPG20N06S3L-35
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPG20N06S3L-35
BESCHREIBUNG
MOSFET 2N-CH 55V 20A 8TDSON
DETAILIERTE BESCHREIBUNG
Mosfet Array 55V 20A 30W Surface Mount PG-TDSON-8-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
20A
Rds On (Max) @ Id, Vgs
35mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 25V
Power - Max
30W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4
Base Product Number
IPG20N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPG20N06S3L-35-ITTR
INFINFIPG20N06S3L-35
SP000396306
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IPG20N06S3L-35
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1(IPG20N06S3L-35)
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