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ChinaGA100JT12-227
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
GA100JT12-227
BESCHREIBUNG
TRANS SJT 1200V 160A SOT227
DETAILIERTE BESCHREIBUNG
1200 V 160A (Tc) 535W (Tc) Chassis Mount SOT-227
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
10mOhm @ 100A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
535W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1242-1317
GA100JT12-227-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor GA100JT12-227
Dokumente und Medien
Datasheets
1(GA100JT12-227)
Menge Preis
-
Stellvertreter
-