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ChinaFQA10N80
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQA10N80
BESCHREIBUNG
MOSFET N-CH 800V 9.8A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 9.8A (Tc) 240W (Tc) Through Hole TO-3P
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
163
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQA10N80-FS
FAIFSCFQA10N80
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA10N80
Dokumente und Medien
Datasheets
1(FQA10N80)
Menge Preis
QUANTITÄT: 163
Einzelpreis: $1.85
Verpackung: Tube
MinMultiplikator: 163
Verpackung: Tube
MinMultiplikator: 163
Stellvertreter
-