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China2SK1058-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK1058-E
BESCHREIBUNG
MOSFET N-CH 160V 7A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 160 V 7A (Ta) 100W (Tc) Through Hole TO-3P
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
2SK1058-E Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
160 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-220-3 Full Pack
Base Product Number
2SK1058
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation 2SK1058-E
Dokumente und Medien
Datasheets
1(2SK1056/7/8)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(2SK1058-E Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FDA18N50
Hersteller. : onsemi
Verfügbare Menge. : 77
Einzelpreis. : $5.61000
Ersatztyp. : Similar
Verfügbare Menge. : 77
Einzelpreis. : $5.61000
Ersatztyp. : Similar