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ChinaIAUS300N08S5N014ATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IAUS300N08S5N014ATMA1
BESCHREIBUNG
MOSFET N-CH 80V 300A HSOG-8
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 300A (Tc) 300W (Tc) Surface Mount PG-HSOG-8-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
18 Weeks
EDACAD-MODELL
IAUS300N08S5N014ATMA1 Models
STANDARDPAKET
1,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
187 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13178 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOG-8-1
Package / Case
8-PowerSMD, Gull Wing
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IAUS300N08S5N014ATMA1DKR
IAUS300N08S5N014ATMA1CT
IAUS300N08S5N014ATMA1TR
SP001792358
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IAUS300N08S5N014ATMA1
Dokumente und Medien
Datasheets
1(IAUS300N08S5N014)
HTML Datasheet
1(IAUS300N08S5N014)
EDA Models
1(IAUS300N08S5N014ATMA1 Models)
Menge Preis
QUANTITÄT: 1800
Einzelpreis: $3.33693
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1800
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1800
Stellvertreter
-