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ChinaFQPF11N50CF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF11N50CF
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 1
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 11A (Tc) 48W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
193
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
FRFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2055 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFQPF11N50CF
2156-FQPF11N50CF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF11N50CF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 193
Einzelpreis: $1.56
Verpackung: Bulk
MinMultiplikator: 193
Verpackung: Bulk
MinMultiplikator: 193
Stellvertreter
-