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ChinaR6535ENZC8
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
R6535ENZC8
BESCHREIBUNG
MOSFET N-CH 650V 35A TO3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 35A (Tc) 102W (Tc) Through Hole TO-3PF
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id
4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
102W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
R6535
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6535ENZC8
Dokumente und Medien
Datasheets
1(R6535ENZ)
PCN Obsolescence/ EOL
1(Mult Dev EOL 26/Jan/2020)
Menge Preis
-
Stellvertreter
Teil Nr. : R6535ENZC17
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 300
Einzelpreis. : $7.56000
Ersatztyp. : Similar
Verfügbare Menge. : 300
Einzelpreis. : $7.56000
Ersatztyp. : Similar