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ChinaPSMN2R6-60PSQ
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TEILNUMMER DES HERSTELLERS
PSMN2R6-60PSQ
BESCHREIBUNG
NOW NEXPERIA PSMN2R6-60PSQ - 150
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 150A (Tc) 326W (Tc) Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
190
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7629 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
326W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-PSMN2R6-60PSQ
NEXNXPPSMN2R6-60PSQ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN2R6-60PSQ
Dokumente und Medien
Datasheets
1(PSMN2R6-60PSQ Datasheet)
Menge Preis
QUANTITÄT: 190
Einzelpreis: $1.58
Verpackung: Bulk
MinMultiplikator: 190
Verpackung: Bulk
MinMultiplikator: 190
Stellvertreter
-