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ChinaCYD09S36V18-200BBXC
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TEILNUMMER DES HERSTELLERS
CYD09S36V18-200BBXC
BESCHREIBUNG
IC SRAM 9MBIT PARALLEL 256FBGA
DETAILIERTE BESCHREIBUNG
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 200 MHz 3.3 ns 256-FBGA (17x17)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
90
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Dual Port, Synchronous
Memory Size
9Mbit
Memory Organization
256K x 36
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3.3 ns
Voltage - Supply
1.42V ~ 1.58V, 1.7V ~ 1.9V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
256-LBGA
Supplier Device Package
256-FBGA (17x17)
Base Product Number
CYD09S36
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
4 (72 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
-CYD09S36V18
428-2035-ND
428-2035
CYD09S36V18-200BBXC-ND
448-CYD09S36V18-200BBXC
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CYD09S36V18-200BBXC
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