English
Spain
Rusia
Italy
ChinaBSS64E6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSS64E6327
BESCHREIBUNG
TRANS NPN 80V 0.8A SOT23
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 80 V 800 mA 100MHz 330 mW Surface Mount SOT-23
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10,377
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 400µA, 4mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4mA, 1V
Power - Max
330 mW
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
INFINFBSS64E6327
2156-BSS64E6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BSS64E6327
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 10377
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 10377
Verpackung: Bulk
MinMultiplikator: 10377
Stellvertreter
-