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ChinaIXTX200N10L2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTX200N10L2
BESCHREIBUNG
MOSFET N-CH 100V 200A PLUS247-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 200A (Tc) 1040W (Tc) Through Hole PLUS247™-3
HERSTELLER
IXYS
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Linear L2™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
540 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
23000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1040W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXTX200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTX200N10L2
Dokumente und Medien
Datasheets
1(IXTK200N10L2)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXTK200N10L2)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $27.0232
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $30.897
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $34.77
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-