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ChinaFQP3N90
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP3N90
BESCHREIBUNG
MOSFET N-CH 900V 3.6A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 3.6A (Tc) 130W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
468
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQP3N90-FS
FAIFSCFQP3N90
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP3N90
Dokumente und Medien
Datasheets
1(FQP3N90)
Menge Preis
QUANTITÄT: 468
Einzelpreis: $0.64
Verpackung: Tube
MinMultiplikator: 468
Verpackung: Tube
MinMultiplikator: 468
Stellvertreter
-