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ChinaPSMN3R3-80ES,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PSMN3R3-80ES,127
BESCHREIBUNG
ELEMENT, NCHANNEL, SILICON, MOSF
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 120A (Tc) 338W (Tc) Through Hole I2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
205
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
139 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9961 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
338W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-PSMN3R3-80ES127
NEXNXPPSMN3R3-80ES,127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN3R3-80ES,127
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 205
Einzelpreis: $1.47
Verpackung: Tube
MinMultiplikator: 205
Verpackung: Tube
MinMultiplikator: 205
Stellvertreter
-