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ChinaMSC280SMA120S
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TEILNUMMER DES HERSTELLERS
MSC280SMA120S
BESCHREIBUNG
SICFET N-CH 1.2KV D3PAK
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V Surface Mount D3PAK
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D3PAK
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
691-MSC280SMA120S
691-MSC280SMA120S-ND
150-MSC280SMA120S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation MSC280SMA120S
Dokumente und Medien
Datasheets
1(Silicon Carbide Semiconductor Products)
Environmental Information
()
Menge Preis
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Stellvertreter
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