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ChinaFQPF9N50C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF9N50C
BESCHREIBUNG
MOSFET N-CH 500V 9A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 9A (Tc) 44W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
304
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQPF9N50C
FAIFSCFQPF9N50C
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF9N50C
Dokumente und Medien
Datasheets
1(FQPF9N50C)
Menge Preis
QUANTITÄT: 304
Einzelpreis: $0.99
Verpackung: Bulk
MinMultiplikator: 304
Verpackung: Bulk
MinMultiplikator: 304
Stellvertreter
-