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ChinaFDZ3N513ZT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDZ3N513ZT
BESCHREIBUNG
MOSFET N-CH 30V 1.1A 4WLCSP
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 1.1A 1W (Ta) Surface Mount 4-WLCSP (1x1)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
859
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.1A
Rds On (Max) @ Id, Vgs
462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V
Vgs (Max)
+5.5V, -300mV
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-WLCSP (1x1)
Package / Case
4-XFBGA, WLCSP
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
FAIFSCFDZ3N513ZT
2156-FDZ3N513ZT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDZ3N513ZT
Dokumente und Medien
Datasheets
1(FDZ3N513ZT)
Menge Preis
QUANTITÄT: 859
Einzelpreis: $0.35
Verpackung: Bulk
MinMultiplikator: 859
Verpackung: Bulk
MinMultiplikator: 859
Stellvertreter
-