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ChinaAPT60M80JVR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT60M80JVR
BESCHREIBUNG
MOSFET N-CH 600V 55A ISOTOP
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 55A (Tc) 568W (Tc) Chassis Mount ISOTOP®
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
POWER MOS V®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
870 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
14500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
568W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
ISOTOP®
Package / Case
SOT-227-4, miniBLOC
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
150-APT60M80JVR
APT60M80JVR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT60M80JVR
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(DPT0F081A1230 Series EOL 15/Sep/2016)
Menge Preis
-
Stellvertreter
-