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TEILNUMMER DES HERSTELLERS
2SA1348
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole 3-SPA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,219
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
300 mW
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
3-SPA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
ONSONS2SA1348
2156-2SA1348
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/onsemi 2SA1348
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 2219
Einzelpreis: $0.14
Verpackung: Bulk
MinMultiplikator: 2219
Verpackung: Bulk
MinMultiplikator: 2219
Stellvertreter
-