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ChinaIPD035N06L3GATMA1
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TEILNUMMER DES HERSTELLERS
IPD035N06L3GATMA1
BESCHREIBUNG
MOSFET N-CH 60V 90A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 90A (Tc) 167W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Base Product Number
IPD035N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPD035N06L3 GCT-ND
IPD035N06L3GATMA1CT
IPD035N06L3GATMA1DKR
IPD035N06L3G
IPD035N06L3 GDKR
SP000398066
IPD035N06L3 GTR-ND
IPD035N06L3 GDKR-ND
IPD035N06L3 G-ND
IPD035N06L3 GCT
IPD035N06L3 G
IPD035N06L3GATMA1TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD035N06L3GATMA1
Dokumente und Medien
Datasheets
1(IPD035N06L3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD035N06L3 G)
Menge Preis
-
Stellvertreter
Teil Nr. : IPD025N06NATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 10,521
Einzelpreis. : $2.56000
Ersatztyp. : Similar
Verfügbare Menge. : 10,521
Einzelpreis. : $2.56000
Ersatztyp. : Similar