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ChinaMT29RZ1CVCZZHGTN-18 W.85H
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TEILNUMMER DES HERSTELLERS
MT29RZ1CVCZZHGTN-18 W.85H
BESCHREIBUNG
IC FLASH RAM 1GBIT PAR 121VFBGA
DETAILIERTE BESCHREIBUNG
FLASH - NAND, DRAM - LPDDR2 Memory IC 1Gbit (NAND), 512Mbit (LPDDR2) Parallel 533 MHz 121-VFBGA (8x7.5)
HERSTELLER
Micron Technology Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,560
Lagerbestände
Technische Daten
Mfr
Micron Technology Inc.
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile, Volatile
Memory Format
FLASH, RAM
Technology
FLASH - NAND, DRAM - LPDDR2
Memory Size
1Gbit (NAND), 512Mbit (LPDDR2)
Memory Organization
128M x 8 (NAND), 32M x 16 (LPDDR2)
Memory Interface
Parallel
Clock Frequency
533 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.8V
Operating Temperature
-25°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
121-WFBGA
Supplier Device Package
121-VFBGA (8x7.5)
Base Product Number
MT29RZ1CV
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
MT29RZ1CVCZZHGTN-18W.85H
MT29RZ1CVCZZHGTN-18 W.85H-ND
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Micron Technology Inc. MT29RZ1CVCZZHGTN-18 W.85H
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Menge Preis
-
Stellvertreter
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