PH5525L,115

Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS

PH5525L,115

BESCHREIBUNG

MOSFET N-CH 25V 81.7A LFPAK56

DETAILIERTE BESCHREIBUNG

N-Channel 25 V 81.7A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8

HERSTELLER

NXP USA Inc.

STANDARD LEADTIME

EDACAD-MODELL

STANDARDPAKET

1,500

Lagerbestände

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Technische Daten

Mfr

NXP USA Inc.

Series

TrenchMOS™

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25 V

Current - Continuous Drain (Id) @ 25°C

81.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

16.6 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150 pF @ 12 V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Base Product Number

PH55

Umweltverträgliche Exportklassifikationen

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Andere Namen

PH5525L T/R

PH5525L T/R-ND

934060924115

954-PH5525L115

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PH5525L,115

Dokumente und Medien

Datasheets

1(PH5525L)

Environmental Information

()

PCN Obsolescence/ EOL

1(Multiple Devices 31/Dec/2011)

PCN Packaging

1(All Dev Label Update 15/Dec/2020)

HTML Datasheet

1(PH5525L)

Menge Preis

-

Stellvertreter

Teil Nr. : BUK9Y6R0-60E,115

Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 16,720
Einzelpreis. : $1.59000
Ersatztyp. : Similar

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Hersteller. : Texas Instruments
Verfügbare Menge. : 4,742
Einzelpreis. : $1.04000
Ersatztyp. : Similar

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