English
Spain
Rusia
Italy
ChinaGA04JT17-247
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
GA04JT17-247
BESCHREIBUNG
TRANS SJT 1700V 4A TO247AB
DETAILIERTE BESCHREIBUNG
1700 V 4A (Tc) (95°C) 106W (Tc) Through Hole TO-247AB
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
480mOhm @ 4A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
106W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
TO-247-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
1242-1134
GA04JT17247
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor GA04JT17-247
Dokumente und Medien
Datasheets
1(GA04JT17-247)
Featured Product
1(Silicon Carbide Transistor)
PCN Obsolescence/ EOL
1(GA04JT17-247 EOL 15/Jun/2019)
Menge Preis
-
Stellvertreter
-