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TEILNUMMER DES HERSTELLERS
2SD1816T-E
BESCHREIBUNG
TRANS NPN 100V 4A TP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 4 A 180MHz 1 W Through Hole TP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
2SD1816T-E Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
1 W
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
TP
Base Product Number
2SD1816
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2SD1816T-EOS
2SD1816T-E-ND
2156-2SD1816T-E-ON
ONSONS2SD1816T-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1816T-E
Dokumente und Medien
Datasheets
1(2SB1216/2SD1816)
Environmental Information
()
PCN Obsolescence/ EOL
1(1Q2018 Product EOL 31/Mar/2018)
EDA Models
1(2SD1816T-E Models)
Menge Preis
-
Stellvertreter
Teil Nr. : 2SD1816T-TL-E
Hersteller. : onsemi
Verfügbare Menge. : 17
Einzelpreis. : $1.05000
Ersatztyp. : Similar
Verfügbare Menge. : 17
Einzelpreis. : $1.05000
Ersatztyp. : Similar