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ChinaFDR844P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDR844P
BESCHREIBUNG
MOSFET P-CH 20V 10A SUPERSOT8
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 10A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
398
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
4951 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-8
Package / Case
8-TSOP (0.130", 3.30mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
FAIFSCFDR844P
2156-FDR844P-FSTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDR844P
Dokumente und Medien
Datasheets
1(FDR844P)
Menge Preis
QUANTITÄT: 398
Einzelpreis: $0.75
Verpackung: Bulk
MinMultiplikator: 398
Verpackung: Bulk
MinMultiplikator: 398
Stellvertreter
-