English
Spain
Rusia
Italy
ChinaSTH110N10F7-6
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STH110N10F7-6
BESCHREIBUNG
MOSFET N-CH 100V 110A H2PAK-6
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 110A (Tc) 150W (Tc) Surface Mount H2PAK-6
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
DeepGATE™, STripFET™ VII
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5117 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-6
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
STH110
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-497-13837-1
-497-13837-2
497-13837-6
497-13837-2
-497-13837-6
497-13837-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STH110N10F7-6
Dokumente und Medien
Datasheets
1(STH110N10F7-2,-6)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
HTML Datasheet
1(STH110N10F7-2,-6)
Menge Preis
-
Stellvertreter
Teil Nr. : SUM70040M-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 799
Einzelpreis. : $2.94000
Ersatztyp. : Similar
Verfügbare Menge. : 799
Einzelpreis. : $2.94000
Ersatztyp. : Similar